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| Semiconductor BC847 NPN Silicon Transistor Descriptions * General purpose application * Switching application Features * High voltage : VCEO=45V * Complementary pair with BC857 Ordering Information Type NO. BC847 Marking RR : hFE rank Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.90.1 KST-2007-001 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.05 1 BC847 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 50 45 5 100 200 150 -55~150 Unit V V V mA mW C C Electrical Characteristics Characteristic Collector-Emitter breakdown voltage Base-Emitter turn on voltage Base-Emitter saturation voltage Collector-Emitter saturation voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Noise figure (Ta=25C) Symbol BVCEO VBE(ON) VBE(sat) VCE(sat) ICBO hFE fT Cob NF * Test Condition IC=1mA, IB=0 VCE=5V, IC=2mA IC=100mA, IB=5mA IC=100mA, IB=5mA VCB=35V, IE=0 VCE=5V, IC=2mA VCE=5V, IC=10mA f=100MHz VCB=10V, IE=0, f=1MHz VCE=5V, IC=200A, f=1KHz, Rg=2K Min. Typ. Max. 45 550 110 900 150 700 600 15 800 4.5 10 Unit V mV mV mV nA MHz pF dB * : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800 KST-2007-001 2 BC847 Electrical Characteristic Curves Fig. 1 PC -Ta Fig. 2 IC -VBE Fig. 3 IC -VCE Fig. 4 hFE -IC Fig. 5 VCE(sat) -IC KST-2007-001 3 |
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